View IRF7805Z_5053253.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www.irf.com 1 10/30/03 IRF7805Z hexfet power mosfet notes through are on page 10 benefits very low r ds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current top view 8 1 2 3 4 5 6 7 d d d d g s a s s a so-8 v dss r ds(on) max qg (typ.) 30v 6.8m @v gs = 10v 18nc applications high frequency point-of-load synchronous buck converter for applications in networking & computing systems. absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation w p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 c/w r ja junction-to-ambient ??? 50 max. 16 12 120 20 30 -55 to + 150 2.5 0.02 1.6

2 www.irf.com static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.023 ??? v/c r ds(on) static drain-to-source on-resistance ??? 5.5 6.8 m ? ??? 7.0 8.7 v gs(th) gate threshold voltage 1.35 ??? 2.25 v ? v gs(th) gate threshold voltage coefficient ??? - 4.7 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 64 ??? ??? s q g total gate charge ??? 18 27 q gs1 pre-vth gate-to-source charge ??? 4.7 ??? q gs2 post-vth gate-to-source charge ??? 1.6 ??? nc q gd gate-to-drain charge ??? 6.2 ??? q godr gate charge overdrive ??? 5.5 ??? see fig. 16 q sw switch charge (q gs2 + q gd ) ??? 7.8 ??? q oss output charge ??? 10 ??? nc t d(on) turn-on delay time ??? 11 ??? t r rise time ??? 10 ??? t d(off) turn-off delay time ??? 14 ??? ns t f fall time ??? 3.7 ??? c iss input capacitance ??? 2080 ??? c oss output capacitance ??? 480 ??? pf c rss reverse transfer capacitance ??? 220 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 3.1 (body diode) a i sm pulsed source current ??? ??? 120 (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 29 44 ns q rr reverse recovery charge ??? 20 30 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) ??? i d = 12a v gs = 0v v ds = 15v v gs = 4.5v, i d = 13a v gs = 4.5v typ. ??? v ds = v gs , i d = 250a clamped inductive load v ds = 15v, i d = 12a v ds = 24v, v gs = 0v, t j = 125c t j = 25c, i f = 12a, v dd = 15v di/dt = 100a/s t j = 25c, i s = 12a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 12a v ds = 15v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 16a conditions max. 72 12 ? = 1.0mhz
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 2.5 3.0 3.5 4.0 4.5 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 15v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 16a v gs = 10v 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 20s pulse width tj = 25c

0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 20s pulse width tj = 150c

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 10203040 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v vds= 15v i d = 12a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1.0 10.0 100.0 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t j , junction temperature (c) 0 4 8 12 16 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 1.081 0.000437 12.880 0.213428 24.191 2.335 11.862 52
6 www.irf.com fig 13c. maximum avalanche energy vs. drain current 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 6.0a 6.9a bottom 12a fig 14a. switching time test circuit fig 14b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - fig 13b. unclamped inductive waveforms fig 13a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 12. on-resistance vs. gate voltage 2.0 4.0 6.0 8.0 10.0 v gs , gate-to-source voltage (v) 0.00 0.01 0.02 0.03 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 125c
www.irf.com 7 d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 16. gate charge test circuit fig 15. for n-channel hexfet power mosfets ? ! ? " ? #$! %& p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - '' ? ()""*+ ? '(&,'- ? ! ""*'./'/ ? '-0'(- fig 17. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr
8 www.irf.com control fet

!"
#
$
%& !"

#

#' p loss = p conduction + p switching + p drive + p output this can be expanded and approximated by; p loss = i rms 2 r ds(on ) () + i q gd i g v in f ? ? ? ? ? ? + i q gs 2 i g v in f ? ? ? ? ? ? + q g v g f () + q oss 2 v in f ? ? ? ? " (

%& !"

%& !"

"

)

#

*

%+

%& !" #
# , #

- .
/
#
#

synchronous fet the power loss equation for q2 is approximated by; p loss = p conduction + p drive + p output * p loss = i rms 2 r ds(on) () + q g v g f () + q oss 2 v in f ? ? ? ? ? + q rr v in f ( ) *dissipated primarily in q1. for the synchronous mosfet q2, r ds(on) is an im- portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. under light load the mosfet must still be turned on and off by the con- trol ic so the gate drive losses become much more significant. secondly, the output charge q oss and re- verse recovery charge q rr both generate losses that are transfered to q1 and increase the dissipation in that device. thirdly, gate charge will impact the mosfets? susceptibility to cdv/dt turn on. the drain of q2 is connected to the switching node of the converter and therefore sees transitions be- tween ground and v in . as q1 turns on and off there is a rate of change of drain voltage dv/dt which is ca- pacitively coupled to the gate of q2 and can induce a voltage spike on the gate that is sufficient to turn the mosfet on, resulting in shoot-through current . the ratio of q gd /q gs1 must be minimized to reduce the potential for cdv/dt turn on. power mosfet selection for non-isolated dc/dc converters figure a: q oss characteristic
www.irf.com 9 so-8 package details so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max mi l l i me t e r s inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. out line conf orms t o jedec out line ms -012aa. not e s : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. controlling dimension: millimeter 3. dime ns ions are s hown in millime t e rs [inche s ]. 5 dime ns ion doe s not include mold prot rus ions . 6 dime ns ion doe s not include mold prot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dime ns ion is t he le ngt h of l e ad f or s olde ring t o a s u b s t r at e . mold prot rus ions not t o exceed 0.15 [.006]. 8x 1.78 [.070] example: this is an irf7101 (mosfet) int ernational rectifier logo f 7101 yww xxxx part number lot code ww = week y = las t digit of t he year dat e code (yww)
10 www.irf.com
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.94mh r g = 25 ? , i as = 12a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board
1
data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/03 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel

▲Up To Search▲

Price & Availability of IRF7805Z

	To Download IRF7805Z Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .